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《半导体学报》2019年第5期目录
Laser welding characteristics of Ti-Pb dissimilar couples and element dif...
Fabricating the Superhydrophobic Nickel and Improving Its Antifriction Pe...
Large-capacity and low-loss integrated optical buffer
Joint clock recovery and feed-forward equalization for PAM4 transmission
Quantum transport relating to impurity quantum dots in silicon nanostruct...
Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on lumi...
Perfect mechanical and robust electronic properties of new carbon nanothr...
Polymer-Based Device Fabrication and Applications Using Direct Laser Writ...
Sampled grating terahertz quantum cascade lasers
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Metal-Catalyst-Free Growth of Patterned Graphene on SiO2 Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device Applications

2019-05-16

 
Authors: Dong, YB; Cheng, CT; Xu, C; Mao, XR; Xie, YY; Chen, HD; Huang, BJ; Zhao, YD; Deng, J; Guo, WL; Pan, GZ; Sun, J
ACS APPLIED MATERIALS & INTERFACES
Volume: 11 Issue: 15 Pages: 14427-14436 Published: APR 17 2019 Language: English Document type: Article
DOI: 10.1021/acsami.9b00124
Abstract:
A metal-catalyst-free method for the direct growth of patterned graphene on an insulating substrate is reported in this paper. Parylene N is used as the carbon source. The surface molecule layer of parylene N is cross-linked by argon plasma bombardment. Under high-temperature annealing, the cross-linking layer of parylene N is graphitized into nanocrystalline graphene, which is a process that transforms organic to inorganic and insulation to conduction, while the parylene N molecules below the cross-linking layer decompose and vaporize at high temperature. Using this technique, the direct growth of a graphene film in a large area and with good uniformity is achieved. The thickness of the graphene is determined by the thickness of the cross-linking layer. Patterned graphene films can be obtained directly by controlling the patterns of the cross-linking region (lithography-free patterning). Graphene-silicon Schottky junction photodetectors are fabricated using the as-grown graphene. The Schottky junction shows good performance. The application of direct-grown graphene in optoelectronics is achieved with a great improvement of the device fabrication efficiency compared with transferred graphene. When illuminated with a 792 nm laser, the responsivity and specific detectivity of the detector measured at room temperature are 275.9 mA/W and 4.93 x 10(9) cm Hz(1/2)/W, respectively.
全文链接:https://pubs.acs.org/doi/abs/10.1021%2Facsami.9b00124



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